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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXTP1R6N100D2
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IXTP1R6N100D2

Part No IXTP1R6N100D2
Manufacturer IXYS Corporation
Description MOSFET N-CH 1000V 1.6A TO220AB
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):1000V
Power Dissipation (Max):100W (Tc)
Package / Case:TO-220-3
Mounting Type:Through Hole
Packaging:Tube
Supplier Device Package:TO-220AB
Vgs(th) (Max) @ Id:-
Drive Voltage (Max Rds On, Min Rds On):10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 1000V 1.6A (Tc) 100W (Tc) Through Hole TO-220AB
FET Feature:Depletion Mode
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:24 Weeks
Email:info@shengyuic.com
FET Type:N-Channel
Series:-
Current - Continuous Drain (Id) @ 25°C:1.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds:645pF @ 25V
Vgs (Max):±20V
Rds On (Max) @ Id, Vgs:10 Ohm @ 800mA, 0V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:27nC @ 5V
Operating Temperature:-55°C ~ 150°C (TJ)

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