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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXFH18N100Q3
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IXFH18N100Q3

Part No IXFH18N100Q3
Manufacturer IXYS Corporation
Description MOSFET N-CH 1000V 18A TO-247
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):1000V
Power Dissipation (Max):830W (Tc)
Package / Case:TO-247-3
Mounting Type:Through Hole
Packaging:Tube
Supplier Device Package:TO-247AD (IXFH)
Vgs(th) (Max) @ Id:6.5V @ 4mA
Drive Voltage (Max Rds On, Min Rds On):10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 1000V 18A (Tc) 830W (Tc) Through Hole TO-247AD (IXFH)
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:24 Weeks
Email:info@shengyuic.com
FET Type:N-Channel
Series:HiPerFET™
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds:4890pF @ 25V
Vgs (Max):±30V
Rds On (Max) @ Id, Vgs:660 mOhm @ 9A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:90nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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