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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > HN4A06J(TE85L,F)
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HN4A06J(TE85L,F)

Part No HN4A06J(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS 2PNP 120V 0.1A SMV
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
Package / Case:SC-74A, SOT-753
Mounting Type:Surface Mount
Packaging:Original-Reel®
Supplier Device Package:SMV
Current - Collector (Ic) (Max):100mA
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:Bipolar (BJT) Transistor Array 2 PNP (Dual) Matched Pair, Common Emitter 120V 100mA 100MHz 300mW Surface Mount SMV
Voltage - Collector Emitter Breakdown (Max):120V
Power - Max:300mW
Moisture Sensitivity Level (MSL):1 (Unlimited)
Frequency - Transition:100MHz
Email:info@shengyuic.com
Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
Series:-
Other Names:HN4A06J(TE85LF)DKR
Transistor Type:2 PNP (Dual) Matched Pair, Common Emitter
Current - Collector Cutoff (Max):100nA (ICBO)
Operating Temperature:150°C (TJ)

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HN4A06J(TE85L,F) Toshiba Semiconductor and Storage TRANS 2PNP 120V 0.1A SMV
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