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GA10JT12-263

Part No GA10JT12-263
Manufacturer GeneSiC Semiconductor
Description TRANS SJT 1200V 25A
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):1200V
Power Dissipation (Max):170W (Tc)
Package / Case:-
Mounting Type:Surface Mount
Packaging:Tube
Supplier Device Package:-
Vgs(th) (Max) @ Id:-
Drive Voltage (Max Rds On, Min Rds On):-
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:1200V 25A (Tc) 170W (Tc) Surface Mount
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:18 Weeks
Email:info@shengyuic.com
FET Type:-
Series:-
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Other Names:1242-1186 GA10JT12-220ISO GA10JT12220ISO
Input Capacitance (Ciss) (Max) @ Vds:1403pF @ 800V
Vgs (Max):-
Rds On (Max) @ Id, Vgs:120 mOhm @ 10A
Technology:SiC (Silicon Carbide Junction Transistor)
Operating Temperature:175°C (TJ)

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