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FQP4N90C

Part No FQP4N90C
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 900V 4A TO-220
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):900V
Power Dissipation (Max):140W (Tc)
Package / Case:TO-220-3
Mounting Type:Through Hole
Packaging:Tube
Supplier Device Package:TO-220AB
Vgs(th) (Max) @ Id:5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 900V 4A (Tc) 140W (Tc) Through Hole TO-220AB
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:N-Channel
Series:QFET®
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds:960pF @ 25V
Vgs (Max):±30V
Rds On (Max) @ Id, Vgs:4.2 Ohm @ 2A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:22nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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