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FJN3310RTA

Part No FJN3310RTA
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 300MW TO92-3
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type:Through Hole
Packaging:Tape & Box (TB)
Supplier Device Package:TO-92-3
Current - Collector (Ic) (Max):100mA
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 100mA 250MHz 300mW Through Hole TO-92-3
Resistor - Base (R1):10 kOhms
Voltage - Collector Emitter Breakdown (Max):40V
Power - Max:300mW
Moisture Sensitivity Level (MSL):1 (Unlimited)
Frequency - Transition:250MHz
Email:info@shengyuic.com
Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
Series:-
Transistor Type:NPN - Pre-Biased
Current - Collector Cutoff (Max):100nA (ICBO)

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