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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDC021N30
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FDC021N30

Part No FDC021N30
Manufacturer AMI Semiconductor / ON Semiconductor
Description PT8 N 30V/20V, MOSFET
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):30V
Power Dissipation (Max):700mW (Ta)
Package / Case:SOT-23-6
Mounting Type:Surface Mount
Packaging:Original-Reel®
Supplier Device Package:SuperSOT™-6
Vgs(th) (Max) @ Id:3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Detailed Description:N-Channel 30V 6.1A (Ta) 700mW (Ta) Surface Mount SuperSOT™-6
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:42 Weeks
Email:info@shengyuic.com
FET Type:N-Channel
Series:PowerTrench®
Current - Continuous Drain (Id) @ 25°C:6.1A (Ta)
Other Names:FDC021N30DKR
Input Capacitance (Ciss) (Max) @ Vds:710pF @ 15V
Vgs (Max):±20V
Rds On (Max) @ Id, Vgs:26 mOhm @ 6.1A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:10.8nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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