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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > EPC8009
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EPC8009

Part No EPC8009
Manufacturer EPC
Description TRANS GAN 65V 2.7A BUMPED DIE
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):65V
Power Dissipation (Max):-
Package / Case:Die
Mounting Type:Surface Mount
Packaging:Cut Tape (CT)
Supplier Device Package:Die
Vgs(th) (Max) @ Id:2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):5V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 65V 2.7A (Ta) Surface Mount Die
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:12 Weeks
Email:info@shengyuic.com
FET Type:N-Channel
Series:eGaN®
Current - Continuous Drain (Id) @ 25°C:2.7A (Ta)
Other Names:917-1078-1
Input Capacitance (Ciss) (Max) @ Vds:52pF @ 32.5V
Vgs (Max):+6V, -4V
Rds On (Max) @ Id, Vgs:130 mOhm @ 500mA, 5V
Technology:GaNFET (Gallium Nitride)
Gate Charge (Qg) (Max) @ Vgs:0.45nC @ 5V
Operating Temperature:-40°C ~ 150°C (TJ)

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