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BS108G

Part No BS108G
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 200V 0.25A TO-92
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):200V
Power Dissipation (Max):350mW (Ta)
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
Mounting Type:Through Hole
Packaging:Tube
Supplier Device Package:TO-92-3
Vgs(th) (Max) @ Id:1.5V @ 1mA
Drive Voltage (Max Rds On, Min Rds On):2V, 2.8V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 200V 250mA (Ta) 350mW (Ta) Through Hole TO-92-3
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:N-Channel
Series:-
Current - Continuous Drain (Id) @ 25°C:250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds:150pF @ 25V
Vgs (Max):±20V
Rds On (Max) @ Id, Vgs:8 Ohm @ 100mA, 2.8V
Technology:MOSFET (Metal Oxide)
Operating Temperature:-55°C ~ 150°C (TJ)

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