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2N7639-GA

Part No 2N7639-GA
Manufacturer GeneSiC Semiconductor
Description TRANS SJT 650V 15A TO-257
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):650V
Power Dissipation (Max):172W (Tc)
Package / Case:TO-257-3
Mounting Type:Through Hole
Packaging:Bulk
Supplier Device Package:TO-257
Vgs(th) (Max) @ Id:-
Drive Voltage (Max Rds On, Min Rds On):-
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Detailed Description:650V 15A (Tc) (155°C) 172W (Tc) Through Hole TO-257
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:-
Series:-
Current - Continuous Drain (Id) @ 25°C:15A (Tc) (155°C)
Other Names:1242-1150
Input Capacitance (Ciss) (Max) @ Vds:1534pF @ 35V
Vgs (Max):-
Rds On (Max) @ Id, Vgs:105 mOhm @ 15A
Technology:SiC (Silicon Carbide Junction Transistor)
Operating Temperature:-55°C ~ 225°C (TJ)

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