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SIHP12N50E-GE3

Part No SIHP12N50E-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 500V 10.5A TO-220AB
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):500V
Power Dissipation (Max):114W (Tc)
Package / Case:TO-220-3
Mounting Type:Through Hole
Packaging:Tube
Supplier Device Package:TO-220AB
Vgs(th) (Max) @ Id:4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 500V 10.5A (Tc) 114W (Tc) Through Hole TO-220AB
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:N-Channel
Series:-
Current - Continuous Drain (Id) @ 25°C:10.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds:886pF @ 100V
Vgs (Max):±30V
Rds On (Max) @ Id, Vgs:380 mOhm @ 6A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:50nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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