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NDS8852H

Part No NDS8852H
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N/P-CH 30V 8SOIC
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):30V
Package / Case:8-SOIC (0.154", 3.90mm Width)
Mounting Type:Surface Mount
Packaging:Tape & Reel (TR)
Supplier Device Package:8-SO
Vgs(th) (Max) @ Id:2.8V @ 250µA
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Detailed Description:Mosfet Array N and P-Channel 30V 4.3A, 3.4A 1W Surface Mount 8-SO
FET Feature:Logic Level Gate
Power - Max:1W
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:N and P-Channel
Series:-
Current - Continuous Drain (Id) @ 25°C:4.3A, 3.4A
Other Names:NDS8852HTR
Input Capacitance (Ciss) (Max) @ Vds:300pF @ 15V
Rds On (Max) @ Id, Vgs:80 mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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