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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRF610STRRPBF
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IRF610STRRPBF

Part No IRF610STRRPBF
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 200V 3.3A D2PAK
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):200V
Power Dissipation (Max):3W (Ta), 36W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type:Surface Mount
Packaging:Tape & Reel (TR)
Supplier Device Package:D2PAK
Vgs(th) (Max) @ Id:4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 200V 3.3A (Tc) 3W (Ta), 36W (Tc) Surface Mount D2PAK
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:11 Weeks
Email:info@shengyuic.com
FET Type:N-Channel
Series:-
Current - Continuous Drain (Id) @ 25°C:3.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds:140pF @ 25V
Vgs (Max):±20V
Rds On (Max) @ Id, Vgs:1.5 Ohm @ 2A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:8.2nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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