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2SA965-Y,T6F(J

Part No 2SA965-Y,T6F(J
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PNP 800MA 120V TO226-3
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 100mA, 5V
Package / Case:TO-226-3, TO-92-3 Long Body
Mounting Type:Through Hole
Packaging:Bulk
Supplier Device Package:LSTM
Current - Collector (Ic) (Max):800mA
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:Bipolar (BJT) Transistor PNP 120V 800mA 120MHz 900mW Through Hole LSTM
Voltage - Collector Emitter Breakdown (Max):120V
Power - Max:900mW
Moisture Sensitivity Level (MSL):1 (Unlimited)
Frequency - Transition:120MHz
Email:info@shengyuic.com
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Series:-
Other Names:2SA965-YT6F(J 2SA965YT6FJ
Transistor Type:PNP
Current - Collector Cutoff (Max):100nA (ICBO)
Operating Temperature:150°C (TJ)

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